FDD3510H Description
These dual N and P- Channel enhancement mode Power MOSFETs are produced using ON Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize on -state resistance and yet maintain superior switching performance. 2 Publication Order Number:.
FDD3510H Key Features
- Max rDS(on) = 80mΩ at VGS = 10V, ID = 4.3A
- Max rDS(on) = 88mΩ at VGS = 6V, ID = 4.1A
- Max rDS(on) = 190mΩ at VGS = -10V, ID = -2.8A
- Max rDS(on) = 224mΩ at VGS = -4.5V, ID = -2.6A
- 100% UIL Tested
- RoHS pliant