FDD3510H Datasheet | onsemi

Features Q1: N-Channel - Max r DS(on) = 80mΩ at VGS = 10V, ID = 4.3A - Max r DS(on) = 88mΩ at VGS = 6V, ID = 4.1A Q2: P-Channel - Max r DS(on) = 190mΩ at VGS = -10V, ID = -2.8A - Max r DS(on) = 224mΩ at VGS = -4.5V, ID = -2.6A - 100% UIL Tested - Ro HS pliant General Description These dual N and P- Channel enhancement mode Power MOSFETs are produced using ON Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize on -state resistance and yet maintain superior switching performance. Applications - Inverter - H-Bridge D1/D2 D1 D2 G2 S2 G1 S1 Dual DPAK 4L G1 G2 S1 N-Channel S2 P-Channel MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDS VGS ID Parameter Drain to Source Voltage Gate to Source Voltage Drain Current - Continuous - Continuous - Pulsed Power Dissipation for Single Operation EAS TJ, TSTG Single Pulse Avalanche Energy Operating and Storage Junction Temperature Range Thermal Characteristics TC = 25°C TA = 25°C TC = 25°C (Note 1) TA = 25°C (Note 1a) TA = 25°C (Note 1b) (Note...