FDD4141 Datasheet - ON Semiconductor

P-Channel MOSFET

FDD4141 Features

* Max RDS(on) = 12.3 mW at VGS =

* 10 V, ID =

* 12.7 A

* Max RDS(on) = 18.0 mW at VGS =

* 4.5 V, ID =

* 10.4 A

* High Performance Trench Technology for Extremely Low RDS(on)

* This Device is Pb

* Free and is RoHS Compliant Applications

* Inverter

FDD4141 General Description

This P *Channel MOSFET has been produced using onsemi’s proprietary POWERTRENCH technology to deliver low RDS(on) and optimized BVDSS capability to offer superior performance benefit in the applications and optimized switching performance capability reducing power dissipation losses in conver.

FDD4141 Datasheet (406.47 KB)