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FDD4141 Datasheet

The FDD4141 is a P-Channel MOSFET. Download the datasheet PDF and view key features and specifications below.

Part NumberFDD4141
Manufactureronsemi
Overview This P−Channel MOSFET has been produced using onsemi’s proprietary POWERTRENCH technology to deliver low RDS(on) and optimized BVDSS capability to offer superior performance benefit in the application.
* Max RDS(on) = 12.3 mW at VGS =
*10 V, ID =
*12.7 A
* Max RDS(on) = 18.0 mW at VGS =
*4.5 V, ID =
*10.4 A
* High Performance Trench Technology for Extremely Low RDS(on)
* This Device is Pb
*Free and is RoHS Compliant Applications
* Inverter
* Power Supplies MOSFET MAXIMUM RATINGS (TC = 25C unless .
Part NumberFDD4141
DescriptionP-Channel PowerTrench MOSFET
ManufacturerFairchild Semiconductor
Overview This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on) and optimized Bvdss capability to offer superior performance benefit .
* Max rDS(on) = 12.3mΩ at VGS = -10V, ID = -12.7A
* Max rDS(on) = 18.0mΩ at VGS = -4.5V, ID = -10.4A
* High performance trench technology for extremely low rDS(on)
* RoHS Compliant tm General Description This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrenc.
Part NumberFDD4141
DescriptionP-Channel MOSFET
ManufacturerVBsemi
Overview FDD4141 P-Channel 4 0 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = -10 V RDS(on) () at VGS = -4.5 V ID (A) Configuration -40 0.012 0.015 -50 Single FEATURES • Trenc.
* TrenchFET® power MOSFET
* Package with low thermal resistance
* 100 % Rg and UIS tested TO-252 S G GDS Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Sou.

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