FDG1024NZ - Dual N-Channel MOSFET

Product Overview

ON Semiconductor

Datasheet Details

Part number	FDG1024NZ
Manufacturer	ON Semiconductor
File Size	273.13 KB
Description	Dual N-Channel MOSFET
Datasheet	FDG1024NZ Datasheet
Additional preview pages of the FDG1024NZ datasheet.

Product details

Description

This dual N Channel logic level enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology.This very high density process is especially tailored to minimize on state resistance.

Features

Max rDS(on) = 175 mW at VGS = 4.5 V, ID = 1.2 A.
Max rDS(on) = 215 mW at VGS = 2.5 V, ID = 1.0 A.
Max rDS(on) = 270 mW at VGS = 1.8 V, ID = 0.9 A.
Max rDS(on) = 389 mW at VGS = 1.5 V, ID = 0.8 A.
HBM ESD Protection Level > 2 kV (Note 3).
Very Low Level Gate Drive Requirements Allowing Operation in 1.5 V Circuits (VGS(th) < 1 V).
Very Small Package Outline SC.
88/SC.
70 6 Lead.
RoHS Compliant.
These De.

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Published: Dec 24, 2023 |