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FDG1024NZ Datasheet Dual N-channel MOSFET

Manufacturer: onsemi

Overview: MOSFET – Dual N-Channel, POWERTRENCH® 20 V, 1.2 A, 175 mW FDG1024NZ.

General Description

This dual N−Channel logic level enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on−state resistance.

This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs.

Key Features

  • Max rDS(on) = 175 mW at VGS = 4.5 V, ID = 1.2 A.
  • Max rDS(on) = 215 mW at VGS = 2.5 V, ID = 1.0 A.
  • Max rDS(on) = 270 mW at VGS = 1.8 V, ID = 0.9 A.
  • Max rDS(on) = 389 mW at VGS = 1.5 V, ID = 0.8 A.
  • HBM ESD Protection Level > 2 kV (Note 3).
  • Very Low Level Gate Drive Requirements Allowing Operation in 1.5 V Circuits (VGS(th) < 1 V).
  • Very Small Package Outline SC.
  • 88/SC.
  • 70 6 Lead.
  • RoHS Compliant.
  • These De.

Similar Datasheet

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