FDG1024NZ Datasheet - ON Semiconductor

Dual N-Channel MOSFET

FDG1024NZ Features

* Max rDS(on) = 175 mW at VGS = 4.5 V, ID = 1.2 A

* Max rDS(on) = 215 mW at VGS = 2.5 V, ID = 1.0 A

* Max rDS(on) = 270 mW at VGS = 1.8 V, ID = 0.9 A

* Max rDS(on) = 389 mW at VGS = 1.5 V, ID = 0.8 A

* HBM ESD Protection Level > 2 kV (Note 3)

* Very Lo

FDG1024NZ General Description

This dual N *Channel logic level enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on *state resistance. This device has been designed especially for l.

FDG1024NZ Datasheet (273.13 KB)