FDG6304P Datasheet Dual P-channel Digital Fet

Manufacturer: onsemi

Overview: Digital FET, Dual P-Channel FDG6304P General.

Datasheet Details

These dual P−Channel logic level enhancement mode field effect transistors are produced using onsemi proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on−state resistance.

This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs.

25 V,.
0.41 A Continuous,.
1.5 A Peak  RDS(ON) = 1.1 W @ VGS =.
4.5 V  RDS(ON) = 1.5 W @ VGS =.
2.7 V.
Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits (VGS(th) < 1.5 V).
Gate.
Source Zener for ESD Ruggedness (>6 kV Human Body Model).
Compact Industry Standard SC70.
6 Surface Mount Package.
These Devices are Pb.
Free and are RoHS Compliant.

Brand Logo	Part Number	Description	Manufacturer
	FDG6304P	Dual P-Channel/ Digital FET	Fairchild Semiconductor