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FDG6321C Datasheet Dual-channel Digital Fet

Manufacturer: onsemi

Overview: Digital FET, Dual N & P Channel FDG6321C General.

General Description

These dual N & P−Channel logic level enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on−state resistance.

This device has been designed especially on low voltage replacement for bipolar digital transistors and small signal MOSFETS.

Key Features

  • N.
  • Ch 0.50 A, 25 V.
  • RDS(ON) = 0.45 W @ VGS = 4.5 V.
  • RDS(ON) = 0.60 W @ VGS = 2.7 V.
  • P.
  • Ch.
  • 0.41 A,.
  • 25 V.
  • RDS(ON) = 1.1 W @ VGS =.
  • 4.5 V.
  • RDS(ON) = 1.5 W @ VGS =.
  • 2.7 V.
  • Very Small Package Outline SC70.
  • 6.
  • Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits (VGS(th) < 1.5 V).
  • Gate.
  • Source Zener for ESD Ruggedness (>6 kV Human B.

Similar Datasheet

Brand Logo Part Number Description Manufacturer
Fairchild Semiconductor Logo FDG6321C Dual N & P Channel Digital FET Fairchild Semiconductor
VBsemi Logo FDG6321C Dual-Channel MOSFET VBsemi

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FDG6321C Distributor