FDG8842CZ Datasheet - ON Semiconductor

MOSFET

FDG8842CZ Features

* Q1: N-Channel

* Max rDS(on) = 0.4Ω at VGS = 4.5V, ID = 0.75A

* Max rDS(on) = 0.5Ω at VGS = 2.7V, ID = 0.67A Q2: P-Channel

* Max rDS(on) = 1.1Ω at VGS =

* 4.5V, ID =

* 0.41A

* Max rDS(on) = 1.5Ω at VGS =

* 2.7V, ID =

* 0.25A

* Very l

FDG8842CZ General Description

These N & P-Channel logic level enhancement mode field effect transistors are produced using ON Semiconductor’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low vol.

FDG8842CZ Datasheet (509.46 KB)