FDG8842CZ - MOSFET

Product Overview

ON Semiconductor

Datasheet Details

Part number	FDG8842CZ
Manufacturer	ON Semiconductor
File Size	509.46 KB
Description	MOSFET
Datasheet	FDG8842CZ Datasheet
Additional preview pages of the FDG8842CZ datasheet.

Product details

Description

These N & P-Channel logic level enhancement mode field effect transistors are produced using ON Semiconductor’s proprietary, high cell density, DMOS technology.

Features

Q1: N-Channel.
Max rDS(on) = 0.4Ω at VGS = 4.5V, ID = 0.75A.
Max rDS(on) = 0.5Ω at VGS = 2.7V, ID = 0.67A Q2: P-Channel.
Max rDS(on) = 1.1Ω at VGS =.
4.5V, ID =.
0.41A.
Max rDS(on) = 1.5Ω at VGS =.
2.7V, ID =.
0.25A.
Very low level gate drive requirements allowing direct operation in 3V circuits(VGS(th).

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Published: Dec 24, 2023 |