Datasheet Summary
FDG8842CZ plementary PowerTrench® MOSFET
FDG8842CZ plementary PowerTrench® MOSFET
Q1:30V,0.75A,0.4Ω; Q2:- 25V,- 0.41A,1.1Ω
Features
Q1: N-Channel
- Max rDS(on) = 0.4Ω at VGS = 4.5V, ID = 0.75A
- Max rDS(on) = 0.5Ω at VGS = 2.7V, ID = 0.67A Q2: P-Channel
- Max rDS(on) = 1.1Ω at VGS =
- 4.5V, ID =
- 0.41A
- Max rDS(on) = 1.5Ω at VGS =
- 2.7V, ID =
- 0.25A
- Very low level gate drive requirements allowing direct operation in 3V circuits(VGS(th) <1.5V)
- Very small package outline SC70-6
General Description
These N & P-Channel logic level enhancement mode field effect transistors are produced using ON Semiconductor’s proprietary, high cell density, DMOS technology. This very high density...
