FDH038AN08A1 Datasheet | onsemi

MOSFET - N-Channel, POWERTRENCH) 75 V, 80 A, 3.8 mW Features - RDS(ON) = 3.5 mW (Typ.), VGS = 10 V, ID = 80 A - Qg (tot) = 125 nC (Typ.), VGS = 10 V - Low Miller Charge - Low Qrr Body Diode - UIS Capability (Single Pulse and Repetitive Pulse) - This Device is Pb- Free and is RoHS pliant Applications - Synchronous Rectification for ATX / Server / Tele PSU - Battery Protection Circuit - Motor Drives and Uninterruptible Power Supplies MOSFET MAXIMUM RATINGS (TC = 25C, Unless otherwise noted) Symbol Parameter Value Unit VDSS VGS ID ID EAS Drain to Source Voltage Gate to Source Voltage Drain Current - Continuous (TC < 158C, VGS = 10 V) (TA = 25C, VGS = 10 V, RqJA =...