FDH50N50
Overview
- RDS(on) = 89 mW (Typ.) @ VGS = 10 V, ID = 24 A
- Low Gate Charge (Typ. 105 nC)
- Low Crss (Typ. 45 pF)
- 100% Avalanche Tested
- Improved dv/dt Capability
- These Devices are Pb-Free and are RoHS Compliant
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| FDH50N50 | Fairchild Semiconductor | 500V N-Channel MOSFET |
| FDH50N50_F133 | Fairchild Semiconductor | N-Channel MOSFET |