FDH50N50 Key Features
- RDS(on) = 89 mW (Typ.) @ VGS = 10 V, ID = 24 A
- Low Gate Charge (Typ. 105 nC)
- Low Crss (Typ. 45 pF)
- 100% Avalanche Tested
- Improved dv/dt Capability
- These Devices are Pb-Free and are RoHS pliant
- Part: FDH50N50
- Description: N-Channel MOSFET
- Manufacturer: onsemi
- Size: 457.39 KB
Other FDH50N50 Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Fairchild Semiconductor |
FDH50N50 | 500V N-Channel MOSFET |
Inchange Semiconductor |
FDH50N50 | N-Channel MOSFET |
|
Fairchild Semiconductor |
FDH50N50_F133 | N-Channel MOSFET |