FDI9406-F085 Datasheet | onsemi

Features - Typ RDS(on) = 1.73mΩ at VGS = 10V, ID = 80A - Typ Qg(tot) = 107n C at VGS = 10V, ID = 80A - UIS Capability - Ro HS pliant - Qualified to AEC Q101 Applications - Automotive Engine Control - Powertrain Management - Solenoid and Motor Drivers - Electronic Steering - Integrated Starter/Alternator - Distributed Power Architectures and VRM - Primary Switch for 12V Systems TO-262AB FDI SERIES MOSFET Maximum Ratings TJ = 25°C unless otherwise noted Symbol Parameter VDSS VGS Drain-to-Source Voltage Gate-to-Source Voltage Drain Current - Continuous (VGS=10) (Note 1) Pulsed Drain Current Single Pulse Avalanche Energy Power Dissipation Derate above 25o C TJ, TSTG Operating and Storage Temperature RθJC Thermal Resistance, Junction to Case RθJA Maximum Thermal Resistance, Junction to Ambient TC = 25°C TC = 25°C (Note 2) (Note 3) Ratings 40 ±20...