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MOSFET – N-Channel, POWERTRENCH), Ultra Thin, 1.5 V
20 V, 9.5 A, 23 mW
FDMA410NZT
Description This Single N−Channel MOSFET has been designed using
onsemi’s advanced Power Trench process to optimize the RDS(on) @ VGS = 1.5 V on special MicroFETt leadframe.
This design is similar to the FDMA410NZ, however it features our new advanced 0.55 mm max 2 x 2 MLP package technology.
Features
• 0.55 mm max package height MicroFET 2 x 2 mm Package • Max RDS(on) = 23 mW at VGS = 4.5 V, ID = 9.5 A • Max RDS(on) = 29 mW at VGS = 2.5 V, ID = 8.0 A • Max RDS(on) = 36 mW at VGS = 1.8 V, ID = 4.0 A • Max RDS(on) = 60 mW at VGS = 1.5 V, ID = 2.0 A • HBM ESD protection level > 1.
FDMA410NZT Datasheet
