Description
This Single N
Channel MOSFET has been designed using
onsemi’s advanced Power Trench process to optimize the RDS(on) @ VGS = 1.5 V on special MicroFETt leadframe.This design is similar to the FDMA410NZ, however it
Features
- our new advanced 0.55 mm max 2 x 2 MLP package technology. Features.
- 0.55 mm max package height MicroFET 2 x 2 mm Package.
- Max RDS(on) = 23 mW at VGS = 4.5 V, ID = 9.5 A.
- Max RDS(on) = 29 mW at VGS = 2.5 V, ID = 8.0 A.
- Max RDS(on) = 36 mW at VGS = 1.8 V, ID = 4.0 A.
- Max RDS(on) = 60 mW at VGS = 1.5 V, ID = 2.0 A.
- HBM ESD protection level > 1.5 kV (Note 3).
- These Devices are Pb.
- Free, Halogen Free/BFR Free and are RoHS
Complian.
FDMA410NZT-ONSemiconductor.pdf
