Datasheet Summary
MOSFET
- Dual, N-Channel, POWERTRENCH)
30 V, 4.8 A, 40 mW
General Description These N- Channel Logic Level MOSFETs are produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on- state resistance and yet maintain superior switching performance.
These devices are well suited for low voltage and battery powered applications where low in- line power loss and fast switching are required.
Features
- Max rDS(on) = 40 mW at VGS = 10 V, ID = 4.8 A
- Max rDS(on) = 51 mW at VGS = 4.5 V, ID = 4.3 A
- Fast Switching Speed
- Low Gate Charge
- High Performance Trench Technology for Extremely Low rDS(on)
- High Power and Current Handling Capability
-...
