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FDMB3800N Datasheet - ON Semiconductor

Dual N-Channel MOSFET

FDMB3800N Features

* Max rDS(on) = 40 mW at VGS = 10 V, ID = 4.8 A

* Max rDS(on) = 51 mW at VGS = 4.5 V, ID = 4.3 A

* Fast Switching Speed

* Low Gate Charge

* High Performance Trench Technology for Extremely Low rDS(on)

* High Power and Current Handling Capability

FDMB3800N General Description

These N *Channel Logic Level MOSFETs are produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on *state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applic.

FDMB3800N Datasheet (210.51 KB)

Preview of FDMB3800N PDF

Datasheet Details

Part number:

FDMB3800N

Manufacturer:

ON Semiconductor ↗

File Size:

210.51 KB

Description:

Dual n-channel mosfet.

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FDMB3800N Dual N-Channel MOSFET ON Semiconductor

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