FDMC4435BZ
Description
This P−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance.
Key Features
- Max rDS(on) = 20 mW at VGS = −10 V, ID = −8.5 A
- Max rDS(on) = 37 mW at VGS = −4.5 V, ID = −6.3 A
- Extended VGSS Range (−25 V) for Battery Applications
- High Performance Trench Technology for Extremely Low rDS(on)
- High Power and Current Handling Capability
- HBM ESD Protection Level > 7 kV Typical
- 100% UIL Tested
- These Devices are Pb−Free and are RoHS pliant
Applications
- High Side in DC − DC Buck Converters
