FDMC4435BZ Datasheet - ON Semiconductor

P-Channel MOSFET

FDMC4435BZ Features

* Max rDS(on) = 20 mW at VGS =

* 10 V, ID =

* 8.5 A

* Max rDS(on) = 37 mW at VGS =

* 4.5 V, ID =

* 6.3 A

* Extended VGSS Range (

* 25 V) for Battery Applications

* High Performance Trench Technology for Extremely Low rDS(on)

* High Power and Curr

FDMC4435BZ General Description

This P *Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on *state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.

FDMC4435BZ Datasheet (591.89 KB)