FDMC4435BZ Overview
This P−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance. This device is well suited for Power Management and load switching applications mon in Notebook puters and Portable Battery Packs.
FDMC4435BZ Key Features
- Max rDS(on) = 20 mW at VGS = -10 V, ID = -8.5 A
- Max rDS(on) = 37 mW at VGS = -4.5 V, ID = -6.3 A
- Extended VGSS Range (-25 V) for Battery
FDMC4435BZ Applications
- The diode connected between the gate and source servers only as protection against ESD. No gate overvoltage rating is implied
