Datasheet Summary
MOSFET
- P-Channel, POWERTRENCH)
-12 V, -80 A, 3.9 mW
General Description This P- Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.
Features
- Max rDS(on) = 3.9 mW at VGS =
- 4.5 V, ID =
- 22 A
- Max rDS(on) = 6.4 mW at VGS =
- 2.5 V, ID =
- 16 A
- State- of- the- art Switching Performance
- Lower Output Capacitance, Gate Resistance, and Gate Charge
Boost Efficiency
- Shielded Gate Technology Reduces Switch Node...
