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FDMC610P Datasheet P-channel MOSFET

Manufacturer: onsemi

Overview: MOSFET – P-Channel, POWERTRENCH) -12 V, -80 A, 3.9 mW FDMC610P.

General Description

This P−Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.

It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.

Key Features

  • Max rDS(on) = 3.9 mW at VGS =.
  • 4.5 V, ID =.
  • 22 A.
  • Max rDS(on) = 6.4 mW at VGS =.
  • 2.5 V, ID =.
  • 16 A.
  • State.
  • of.
  • the.
  • art Switching Performance.
  • Lower Output Capacitance, Gate Resistance, and Gate Charge Boost Efficiency.
  • Shielded Gate Technology Reduces Switch Node Ringing and Increases Immunity to EMI and Cross Conduction.
  • This Device is Pb.
  • Free, Halide Free and is RoHS Compliant A.

Similar Datasheet

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