FDMC610P Datasheet - ON Semiconductor

P-Channel MOSFET

FDMC610P Features

* Max rDS(on) = 3.9 mW at VGS =

* 4.5 V, ID =

* 22 A

* Max rDS(on) = 6.4 mW at VGS =

* 2.5 V, ID =

* 16 A

* State

* of

* the

* art Switching Performance

* Lower Output Capacitance, Gate Resistance, and Gate Charge Boost Ef

FDMC610P General Description

This P *Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and .

FDMC610P Datasheet (369.32 KB)