Datasheet Summary
MOSFET
- P-Channel, POWERTRENCH)
-20 V, -56 A, 4 mW
General Description This P- Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH process that has been optimized for RDS(ON), switching performance and ruggedness.
Features
- Max RDS(on) = 4 mW at VGS =
- 4.5 V, ID =
- 18 A
- Max RDS(on) = 5.7 mW at VGS =
- 2.5 V, ID =
- 16 A
- Max RDS(on) =11.5 mW at VGS =
- 1.8 V, ID =
- 11 A
- High Performance Trench Technology for Extremely Low RDS(on)
- High Power and Current Handling Capability in a Widely Used
Surface Mount Package
- This Device is Pb- Free, Halide Free and is RoHS pliant
Applications
- Load Switch
- Battery Management
- Power Management
- Reverse Polarity...
