FDMC8321L Datasheet - ON Semiconductor

N-Channel MOSFET

FDMC8321L Features

* Max RDS(on) = 2.5 mW at VGS = 10 V, ID = 22 A Max RDS(on) = 4.1 mW at VGS = 4.5 V, ID = 18 A

* Advanced Package and Silicon Combination for Low RDS(on) and High Efficiency

* Next Generation Enhanced Body Diode Technology, Engineered for Soft Recovery

* 100% UIL Test

FDMC8321L General Description

This N *Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch mode ringing of DC/DC converters using either synchronous or conventional switching PWM contollers. It has been optimized for low gate charge, low RDS(on), fast switching speed body .

FDMC8321L Datasheet (485.54 KB)