Datasheet Summary
MOSFET
- N-Channel, DUAL COOL) 33, POWERTRENCH)
40 V, 108 A, 2.5 mW
General Description This N- Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH process. Advancements in both silicon and DUAL COOL package technologies have been bined to offer the lowest RDS(on) while maintaining excellent switching performance by extremely low Junction- to- Ambient thermal resistance.
Features
- DUAL COOL Top Side Cooling PQFN Package
- Max RDS(on) = 2.5 mW at VGS = 10 V, ID = 27 A
- Max RDS(on) = 4.1 mW at VGS = 4.5 V, ID = 21 A
- High Performance Technology for Extremely Low RDS(on)
- This Device is Pb- Free, Halide Free and RoHS pliant
Applications
- Primary DC- DC Switch
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