FDMC8360L Datasheet - ON Semiconductor

N-Channel MOSFET

* Shielded Gate MOSFET Technology

* Max RDS(on) = 2.1 mW at VGS = 10 V, ID = 27 A

* Max RDS(on) = 3.1 mW at VGS = 4.5 V, ID = 22 A

* High Performance Technology for Extremely Low RDS(on)

* Termination is Lead

* Free

* 100% UIL Tested

* Th

FDMC8360L

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N-channel mosfet.

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FDMC8360L N-Channel MOSFET ON Semiconductor

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