Datasheet Summary
MOSFET
- N-Channel, Shielded Gate POWERTRENCH)
40 V, 80 A, 2.1 mW
General Description This N- Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized for the on- state resistance and yet maintain superior switching performance.
Features
- Shielded Gate MOSFET Technology
- Max RDS(on) = 2.1 mW at VGS = 10 V, ID = 27 A
- Max RDS(on) = 3.1 mW at VGS = 4.5 V, ID = 22 A
- High Performance Technology for Extremely Low RDS(on)
- Termination is Lead- Free
- 100% UIL Tested
- This Device is Pb- Free, Halide Free and is RoHS pliant
Application
- DC- DC Conversion
MOSFET MAXIMUM RATINGS (TA = 25°C...
