FDMC86160ET100 Datasheet - ON Semiconductor

N-Channel MOSFET

FDMC86160ET100 Features

* Extended TJ Rating to 175°C

* Shielded Gate MOSFET Technology

* Max rDS(on) = 14 mW at VGS = 10 V, ID = 9 A

* Max rDS(on) = 23 mW at VGS = 6 V, ID = 7 A

* High Performance Technology for Extremely Low rDS(on)

* Termination is Lead

* free and Ro

FDMC86160ET100 General Description

This N *Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized for the on *state resistance. This device is well suited for applications where ulta low RDS (on) is required in small spaces such .

FDMC86160ET100 Datasheet (470.79 KB)