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FDMC86160ET100 Datasheet N-channel MOSFET

Manufacturer: onsemi

Overview: MOSFET – N-Channel, Shielded Gate, POWERTRENCH) 100 V, 43 A, 14.

General Description

This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that incorporates Shielded Gate technology.

This process has been optimized for the on−state resistance.

This device is well suited for applications where ulta low RDS (on) is required in small spaces such as High performance VRM, POL and orring functions.

Key Features

  • Extended TJ Rating to 175°C.
  • Shielded Gate MOSFET Technology.
  • Max rDS(on) = 14 mW at VGS = 10 V, ID = 9 A.
  • Max rDS(on) = 23 mW at VGS = 6 V, ID = 7 A.
  • High Performance Technology for Extremely Low rDS(on).
  • Termination is Lead.
  • free and RoHS Compliant.

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