Datasheet Summary
MOSFET
- N-Channel, Shielded Gate, POWERTRENCH)
80 V, 6.5 mW , 48 A
Description This N- Channel MOSFET is produced using onsemi’s advanced
POWETRENCH process that incorporates Shielded Gate technology. This process has been optimized for the on- state resistance and yet maintain superior switching performance.
Features
- Shielded Gate MOSFET Technology
- Max RDS(on) = 6.5 mW at VGS = 10 V, ID = 14 A
- Max RDS(on) = 8.5 mW at VGS = 8 V, ID = 12 A
- High Performance Technology for Extremely Low RDS(on)
- Termination is Lead- Free
- RoHS pliant
Applications
- DC- DC Conversion
MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Symbol
Parameter
Ratings Unit
VDS Drain- to-...
