FDMC86520L Datasheet - ON Semiconductor

N-Channel MOSFET

FDMC86520L Features

* Max rDS(on) = 7.9 mW at VGS = 10 V, ID = 13.5 A

* Max rDS(on) = 11.7 mW at VGS = 4.5 V, ID = 11.5 A

* Low Profile

* 1 mm Max in Power 33

* 100% UIL Tested

* This Device is Pb

* Free, Halide Free and RoHS Compliant Applications

* Primary

FDMC86520L General Description

This N *Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and .

FDMC86520L Datasheet (241.49 KB)