Datasheet Summary
MOSFET
- N-Channel, Shielded Gate POWERTRENCH)
60 V, 84 A, 4.3 mW
General Description This N- Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized for the on- state resistance and yet maintain superior switching performance.
Features
- Shielded Gate MOSFET Technology
- Max rDS(on) = 4.3 mW at VGS = 10 V, ID = 18 A
- Max rDS(on) = 6.5 mW at VGS = 4.5 V, ID = 15 A
- High Performance Technology for Extremely Low rDS(on)
- These Devices are Pb- Free and are RoHS pliant
Application
- DC- DC Conversion
MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
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