FDMC86570L Datasheet | Fairchild Semiconductor

FDMC86570L N-Channel Shielded Gate PowerTrench® MOSFET March 2015 N-Channel Shielded Gate PowerTrench® MOSFET 60 V, 84 A, 4.3 mΩ Features - Shielded Gate MOSFET Technology - Max rDS(on) = 4.3 mΩ at VGS = 10 V, ID = 18 A - Max rDS(on) = 6.5 mΩ at VGS = 4.5 V, ID = 15 A - High performance technology for extremely low rDS(on) - Termination is Lead-free - RoHS pliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance. Application - DC-DC Conversion Pin 1 Pin...