FDMC86570L Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance. Application DC-DC Conversion Pin 1 Pin 1 S S SG S S D D D DD D SD GD Top Bottom Power 33 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted.
FDMC86570L Key Features
- Shielded Gate MOSFET Technology
- Max rDS(on) = 4.3 mΩ at VGS = 10 V, ID = 18 A
- Max rDS(on) = 6.5 mΩ at VGS = 4.5 V, ID = 15 A
- High performance technology for extremely low rDS(on)
- Termination is Lead-free
- RoHS pliant
- DC-DC Conversion
- Continuous -Continuous -Continuous -Pulsed