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FDMC86570L - MOSFET

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology.

This process has been optimized for the on-state resistance and yet maintain superior switching performance.

DC-DC Conversion Pin 1 Pin

Key Features

  • Shielded Gate MOSFET Technology.
  • Max rDS(on) = 4.3 mΩ at VGS = 10 V, ID = 18 A.
  • Max rDS(on) = 6.5 mΩ at VGS = 4.5 V, ID = 15 A.
  • High performance technology for extremely low rDS(on).
  • Termination is Lead-free.
  • RoHS Compliant General.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDMC86570L N-Channel Shielded Gate PowerTrench® MOSFET March 2015 FDMC86570L N-Channel Shielded Gate PowerTrench® MOSFET 60 V, 84 A, 4.3 mΩ Features „ Shielded Gate MOSFET Technology „ Max rDS(on) = 4.3 mΩ at VGS = 10 V, ID = 18 A „ Max rDS(on) = 6.5 mΩ at VGS = 4.5 V, ID = 15 A „ High performance technology for extremely low rDS(on) „ Termination is Lead-free „ RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.