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FDMC86570L - N-Channel MOSFET

General Description

This N

POWERTRENCH process that incorporates Shielded Gate technology.

state resistance and yet maintain superior switching performance.

Key Features

  • Shielded Gate MOSFET Technology.
  • Max rDS(on) = 4.3 mW at VGS = 10 V, ID = 18 A.
  • Max rDS(on) = 6.5 mW at VGS = 4.5 V, ID = 15 A.
  • High Performance Technology for Extremely Low rDS(on).
  • These Devices are Pb.
  • Free and are RoHS Compliant.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – N-Channel, Shielded Gate POWERTRENCH) 60 V, 84 A, 4.3 mW FDMC86570L General Description This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized for the on−state resistance and yet maintain superior switching performance. Features • Shielded Gate MOSFET Technology • Max rDS(on) = 4.3 mW at VGS = 10 V, ID = 18 A • Max rDS(on) = 6.5 mW at VGS = 4.