FDMQ8203 - Dual N-Channel and Dual P-Channel Power MOSFET

onsemi

General Description

This quad mosfet solution provides ten

dissipation over diode bridge.

Key Features

Q1/Q4: N.
Channel.
Max RDS(on) = 110 mΩ at VGS = 10 V, ID = 3 A.
Max RDS(on) = 175 mΩ at VGS = 6 V, ID = 2.4 A.
Q2/Q3: P.
Channel.
Max RDS(on) = 190 mΩ at VGS =.
10 V, ID =.
2.3 A.
Max RDS(on) = 235 mΩ at VGS =.
4.5 V, ID =.
2.1 A.

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FDMQ8203 dual n-channel and dual p-channel power mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	FDMQ8203
Manufacturer	onsemi
File Size	293.87 KB
Description	Dual N-Channel and Dual P-Channel Power MOSFET
Datasheet	FDMQ8203 Datasheet

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Full PDF Text Transcription (Reference)

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MOSFET – Dual N-Channel and Dual P-Channel, POWERTRENCH), GreenBridgetSeries of High-Efficiency Bridge Rectifiers N-Channel: 100 V, 6 A, 110 mW P-Channel: -80 V, -6 A, 190 mW FDMQ8203 General Description This quad mosfet solution provides ten−fold improvement in power dissipation over diode bridge. Features • Q1/Q4: N−Channel ♦ Max RDS(on) = 110 mΩ at VGS = 10 V, ID = 3 A ♦ Max RDS(on) = 175 mΩ at VGS = 6 V, ID = 2.4 A • Q2/Q3: P−Channel ♦ Max RDS(on) = 190 mΩ at VGS = −10 V, ID = −2.3 A ♦ Max RDS(on) = 235 mΩ at VGS = −4.5 V, ID = −2.1 A Applications • High−Efficiency Bridge Rectifiers • Substantial Efficiency Benefit in PD Solutions • These Device is Pb−Free, Halide Free and is RoHS Compliant DATA SHEET www.onsemi.