FDMQ8203 mosfet equivalent, dual n-channel and dual p-channel power mosfet.
* Q1/Q4: N−Channel
* Max RDS(on) = 110 mΩ at VGS = 10 V, ID = 3 A
* Max RDS(on) = 175 mΩ at VGS = 6 V, ID = 2.4 A
* Q2/Q3: P−Channel
* Max RDS(on) = 1.
* High−Efficiency Bridge Rectifiers
* Substantial Efficiency Benefit in PD Solutions
* These Device is Pb−Fr.
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