FDMQ8203 Key Features
- Q1/Q4: N-Channel
- Max RDS(on) = 110 mΩ at VGS = 10 V, ID = 3 A
- Max RDS(on) = 175 mΩ at VGS = 6 V, ID = 2.4 A
- Q2/Q3: P-Channel
- Max RDS(on) = 190 mΩ at VGS = -10 V, ID = -2.3 A
- Max RDS(on) = 235 mΩ at VGS = -4.5 V, ID = -2.1 A
- Part: FDMQ8203
- Description: Dual N-Channel and Dual P-Channel Power MOSFET
- Manufacturer: onsemi
- Size: 293.87 KB
Other FDMQ8203 Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Fairchild Semiconductor |
FDMQ8203 | Dual N-Channel and Dual P-Channel PowerTrench MOSFET |