Datasheet Summary
MOSFET
- N-Channel, UltraFET Trench
150 V, 27 A, 47 mW
General Description UItraFETt devices bine characteristics that enable benchmark efficiency in power conversion applications. Optimized for rDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters.
Features
- Max rDS(on) = 47 mW at VGS = 10 V, ID = 4.5 A
- Max rDS(on) = 53 mW at VGS = 6 V, ID = 4.5 A
- Low Miller Charge
- Optimized Efficiency at High Frequencies
- UIS Capability (Single Pulse and Repetitive Pulse)
- This Device is Pb- Free and is RoHS pliant
Applications
- Distributed Power Architectures and VRMs
- Primary Switch for 24 V and 48 V Systems
- High...
