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FDMS3660S - Asymmetric Dual N-Channel MOSFET

Description

This device includes two specialized N

dual PQFN package.

The switch node has been internally connected to enable easy placement and routing of synchronous buck converters.

Features

  • Q1: N.
  • Channel.
  • Max rDS(on) = 8 mW at VGS = 10 V, ID = 13 A.
  • Max rDS(on) = 11 mW at VGS = 4.5 V, ID = 11 A Q2: N.
  • Channel.
  • Max rDS(on) = 1.8 mW at VGS = 10 V, ID = 30 A.
  • Max rDS(on) = 2.2 mW at VGS = 4.5 V, ID = 27 A.
  • Low Inductance Packaging Shortens Rise/Fall Times, Resulting in Lower Switching Losses.
  • MOSFET Integration Enables Optimum Layout for Lower Circuit Inductance and Reduced Switch Node Ringing.
  • These Devices.

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Datasheet preview – FDMS3660S

Datasheet Details

Part number FDMS3660S
Manufacturer ON Semiconductor
File Size 702.36 KB
Description Asymmetric Dual N-Channel MOSFET
Datasheet download datasheet FDMS3660S Datasheet
Additional preview pages of the FDMS3660S datasheet.

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Full PDF Text Transcription

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FDMS3660S PowerTrench) Power Stage Asymmetric Dual N−Channel MOSFET Description This device includes two specialized N−Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFET (Q2) have been designed to provide optimal power efficiency. Features Q1: N−Channel • Max rDS(on) = 8 mW at VGS = 10 V, ID = 13 A • Max rDS(on) = 11 mW at VGS = 4.5 V, ID = 11 A Q2: N−Channel • Max rDS(on) = 1.8 mW at VGS = 10 V, ID = 30 A • Max rDS(on) = 2.2 mW at VGS = 4.
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