Datasheet Summary
MOSFET
- N-Channel POWERTRENCH)
100 V, 39 A, 14.8 mW
Description This N- Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH process that has been especially tailored to minimize the on- state resistance and yet maintain superior switching performance.
Features
- Max RDS(on) = 14.8 mW at VGS = 10 V, ID = 8.9 A
- Advanced Package and Silicon bination for low RDS(on)
- Lowers Switching Noise/EMI
- MSL1 Robust Package Design
- 100% UIL Tested
- These Device is Pb- Free and RoHS pliant
Typical Applications
- DC- DC...
