Datasheet Summary
DATA SHEET .onsemi.
MOSFET
- N-Channel, DUAL COOL) DFN8, POWERTRENCH)
40 V, 192 A, 1.1 mW
Features
- Max RDS(on) = 1.1 mW at VGS = 10 V, ID = 44 A
- Max RDS(on) = 1.5 mW at VGS = 4.5 V, ID = 37 A
- Advanced Package and Silicon bination for Low RDS(on) and
High Efficiency
- Next Generation Enhanced Body Diode Technology, Engineered for
Soft Recovery
- MSL1 Robust Package Design
- 100% UIL Tested
- This Device is Pb- Free, Halogen Free and RoHS pliant
Applications
- OringFET/Load Switching
- Synchronous Rectification
- DC- DC Conversion
MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol
Parameter
Ratings
Unit
VDSS Drain- to- Source...
