Datasheet Summary
MOSFET
- P-Channel, POWERTRENCH)
-150 V, -22 A, 53 mW
General Description This P- Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH technology. This very high density process is especially tailored to minimize on- state resistance and optimized for superior switching performance.
Features
- Max rDS(on) = 53 mW at VGS =
- 10 V, ID =
- 4.4 A
- Max rDS(on) = 64 mW at VGS =
- 6 V, ID =
- 4 A
- Very Low Rds- on in Mid- Voltage P- Channel Silicon Technology
Optimized for Low Qg
- This Product is Optimised for Fast Switching Applications as Well as Load Switch Applications
- 100% Uil Tested
- This Device is Pb- Free and is RoHS pliant
Applications
- Active Clamp Switch
- Load...
