Datasheet Summary
MOSFET
- N-Channel, POWERTRENCH®
80 V, 130 A, 2.4 mW
Description This N- Channel MOSFET is produced using onsemi advanced
POWERTRENCH® process that has been especially tailored to minimize the on- state resistance and yet maintain superior switching performance.
Features
- Max RDS(on) = 2.4 mW at VGS = 10 V, ID = 25 A
- Max RDS(on) = 3.2 mW at VGS = 8 V, ID = 22 A
- Advanced Package and Silicon bination for Low RDS(on) and
High Efficiency
- MSL1 Robust Package Design
- 100% UIL Tested
- RoHS pliant
- These Device is Halogen Free
Applications
- Primary MOSFET
- Synchronous Rectifier
- Load Switch
- Motor Control Switch
DATA SHEET .onsemi.
Pin 1
Pin 1 SSS G
DDD...
