FDMS86500DC
Overview
This N-Channel MOSFET is produced using onsemi’s advanced POWERTRENCH® process. Advancements in both silicon and DUAL COOL® package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.
- DUAL COOL® Top Side Cooling DFN8 Package
- Max rDS(on) = 2.3 mW at VGS = 10 V, ID = 29 A
- Max rDS(on) = 3.3 mW at VGS = 8 V, ID = 24 A
- High Performance Technology for Extremely Low rDS(on)
- 100% UIL Tested
- RoHS Compliant
