FDMS86500DC
FDMS86500DC is N-Channel MOSFET manufactured by onsemi.
Description This N- Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH® process. Advancements in both silicon and DUAL COOL® package technologies have been bined to offer the lowest r DS(on) while maintaining excellent switching performance by extremely low Junction- to- Ambient thermal resistance.
Features
- DUAL COOL® Top Side Cooling DFN8 Package
- Max r DS(on) = 2.3 m W at VGS = 10 V, ID = 29 A
- Max r DS(on) = 3.3 m W at VGS = 8 V, ID = 24 A
- High Performance Technology for Extremely Low r DS(on)
- 100% UIL Tested
- Ro HS pliant
Applications
- Synchronous Rectifier for DC/DC Converters
- Tele Secondary Side Rectification
- High End Server/Workstation Vcore Low Side
MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol
Parameter
Ratings Unit
Drain to Source Voltage
Gate to Source Voltage
Drain Current:
Continuous, TC = 25°C
Continuous, TA = 25°C (Note 1a)
Pulsed
±20
A 108 29 200
Single Pulse Avalanche Energy (Note 3)
294 m J
Power Dissipation:
TC = 25°C
TA = 25°C (Note...
