FDMS9410-F085
FDMS9410-F085 is N-Channel Power MOSFET manufactured by onsemi.
Features
- Typical RDS(on) = 3.7 mΩ at VGS = 10V, ID = 50 A
- Typical Qg(tot) = 24 n C at VGS = 10V, ID = 50 A
- UIS Capability
- Ro HS pliant
- Qualified to AEC Q101
Applications
- Automotive Engine Control
- Power Train Management
- Solenoid and Motor Drivers
- Electronic Steering
- Integrated Starter/Alternator
- Distributed Power Architectures and VRM
- Primary Switch for 12V Systems
For current package drawing, please refer to the web‐site at https://.onsemi.
MOSFET Maximum Ratings TJ = 25°C unless otherwise noted.
Symbol
Parameter
VDSS VGS
Drain-to-Source Voltage Gate-to-Source Voltage Drain Current
- Continuous (VGS=10) (Note 1) Pulsed Drain Current
Single Pulse Avalanche Energy
Power Dissipation
Derate Above 25o C
TJ, TSTG Operating and Storage Temperature
RθJC
Thermal Resistance, Junction to Case
RθJA
Maximum Thermal Resistance, Junction to Ambient
TC = 25°C TC = 25°C
(Note 2)
(Note 3)
Ratings 40 ±20 50
See Figure 4 39 75 0.5
-55 to + 175 2 50
Units V V
A m J W W/o C o C o C/W o...
