FDMT800100DC
Description
This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process.
Key Features
- Max rDS(on) = 2.95 mW at VGS = 10 V, ID = 24 A
- Max rDS(on) = 4.46 mW at VGS = 6 V, ID = 19 A
- Advanced Package and Silicon bination for Low rDS(on)
- Next Generation Enhanced Body Diode Technology
- Low Profile 8 x 8 mm MLP Package
- MSL1 Robust Package Design
- 100% UIL Tested
- This Device is Pb−Free, Halide Free and RoHS pliant
Applications
- OringFET / Load Switching
