FDN302P Datasheet, ON Semiconductor

* −20 V, −2.4 A RDS(ON) = 0.055 W @ VGS = −4.5 V RDS(ON) = 0.080 W @ VGS = −2.5 V
* Fast Switching Speed
* High Performance Trench Technology for Extremely Lo.

with a wide range of gate drive voltage (2.5 V − 12 V). Features
* −20 V, −2.4 A RDS(ON) = 0.055 W @ VGS = −4.5 V RD.

This P−Channel 2.5 V specified MOSFET uses a rugged gate version of onsemi’s advanced POWERTRENCH process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5 V − 12 V). Features
* −20 V, −2.4 A RD.