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FDN308P Datasheet P-channel MOSFET

Manufacturer: onsemi

Overview: MOSFET – P-Channel, 2.5 V Specified, POWERTRENCH) FDN308P General.

General Description

This P−Channel 2.5 V specified MOSFET uses a rugged gate version of onsemi’s advanced POWERTRENCH process.

It has been optimized for power management applications with a wide range of gate drive voltage (2.5 V – 12 V).

Key Features

  • 20 V,.
  • 1.5 A RDS(on) = 125 mW @ VGS =.
  • 4.5 V RDS(on) = 190 mW @ VGS =.
  • 2.5 V.
  • Fast Switching Speed.
  • High Performance Trench Technology for Extremely Low RDS(on).
  • SUPERSOTt.
  • 3 Provides Low RDS(on) and 30% Higher Power Handling Capability than SOT.
  • 23 in the Same Footprint.
  • This is a Pb.
  • Free and Halide Free Device.

Similar Datasheet

Brand Logo Part Number Description Manufacturer
Fairchild Semiconductor Logo FDN308P P-Channel MOSFET Fairchild Semiconductor

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