Datasheet Summary
MOSFET
- P-Channel, 2.5 V Specified, POWERTRENCH) FDN308P
General Description This P- Channel 2.5 V specified MOSFET uses a rugged gate version of onsemi’s advanced POWERTRENCH process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5 V
- 12 V).
Features
- - 20 V,
- 1.5 A RDS(on) = 125 mW @ VGS =
- 4.5 V
RDS(on) = 190 mW @ VGS =
- 2.5 V
- Fast Switching Speed
- High Performance Trench Technology for Extremely Low RDS(on)
- SUPERSOTt- 3 Provides Low RDS(on) and 30% Higher Power
Handling Capability than SOT- 23 in the Same Footprint
- This is a Pb- Free and Halide Free Device
Applications
- Power Management
- Load Switch
- Battery Protection
ABSOLU...
