FDN308P - P-Channel MOSFET

Product Overview

ON Semiconductor

Datasheet Details

Part number	FDN308P
Manufacturer	ON Semiconductor
File Size	287.57 KB
Description	P-Channel MOSFET
Datasheet	FDN308P Datasheet
Additional preview pages of the FDN308P datasheet.

Product details

Description

This P Channel 2.5 V specified MOSFET uses a rugged gate version of onsemi’s advanced POWERTRENCH process.It has been optimized for power management applications with a wide range of gate drive voltage (2.5 V 12 V).

Features

20 V,.
1.5 A RDS(on) = 125 mW @ VGS =.
4.5 V RDS(on) = 190 mW @ VGS =.
2.5 V.
Fast Switching Speed.
High Performance Trench Technology for Extremely Low RDS(on).
SUPERSOTt.
3 Provides Low RDS(on) and 30% Higher Power Handling Capability than SOT.
23 in the Same Footprint.
This is a Pb.
Free and Halide Free Device.

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Published: Dec 25, 2023 |