FDN338P - P-Channel MOSFET

Product Overview

ON Semiconductor

Datasheet Details

Part number	FDN338P
Manufacturer	ON Semiconductor
File Size	283.83 KB
Description	P-Channel MOSFET
Datasheet	FDN338P Datasheet
Additional preview pages of the FDN338P datasheet.

Product details

Description

This P Channel 2.5 V specified MOSFET uses onsemi’s advanced low voltage POWERTRENCH process.It has been optimized for battery power management applications.

Features

1.6 A,.
20 V RDS(ON) = 115 mW @ VGS =.
4.5 V RDS(ON) = 155 mW @ VGS =.
2.5 V.
Fast Switching Speed.
High Performance Trench Technology for Extremely Low RDS(ON).
SUPERSOTt.
3 Provides Low RDS(ON) and 30% Higher Power Handling Capability than SOT.
23 in the Same Footprint.
This is a Pb.
Free and Halide Free Device.

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Published: Dec 25, 2023 |