Datasheet Summary
MOSFET
- P-Channel, 2.5 V Specified, POWERTRENCH) FDN338P
General Description This P- Channel 2.5 V specified MOSFET uses onsemi’s advanced low voltage POWERTRENCH process. It has been optimized for battery power management applications.
Features
- - 1.6 A,
- 20 V RDS(ON) = 115 mW @ VGS =
- 4.5 V
RDS(ON) = 155 mW @ VGS =
- 2.5 V
- Fast Switching Speed
- High Performance Trench Technology for Extremely Low RDS(ON)
- SUPERSOTt- 3 Provides Low RDS(ON) and 30% Higher Power
Handling Capability than SOT- 23 in the Same Footprint
- This is a Pb- Free and Halide Free Device
Applications
- Battery Management
- Load Switch
- Battery...
