Datasheet Summary
MOSFET
- P-Channel, POWERTRENCH®, Specified
2.5 V
General Description This P- Channel 2.5 V specified MOSFET is produced in a rugged gate version of onsemi’s advanced POWERTRENCH process. It has been optimized for power management applications for a wide range of gate drive voltages (2.5 V
- 12 V).
Applications
- Load Switch
- Battery Protection
- Power Management
Features
- - 2 A,
- 20 V
- RDS(ON) = 0.08 W @ VGS =
- 4.5 V
- RDS(ON) = 0.13 W @ VGS =
- 2.5 V
- Rugged gate rating (±12 V).
- High Performance Trench Technology for Extremely Low RDS(ON)
- Enhanced power SUPERSOTt- 3 (SOT- 23)
DATA SHEET .onsemi.
S G SOT- 23/SUPERSOT- 3 CASE 527AG
MARKING DIAGRAM
XXXMG G
XXX =...
