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FDN358P Datasheet - ON Semiconductor

P-Channel MOSFET

FDN358P Features

* 1.5 A,

* 30 V

* RDS(ON) = 125 mW @ VGS =

* 10 V

* RDS(ON) = 200 mW @ VGS =

* 4.5 V

* Low Gate Charge (4 nC Typical)

* High Performance Trench Technology for Extremely Low RDS(ON)

* High Power Version of Industry Standard

FDN358P General Description

This P *Channel Logic Level MOSFET is produced using onsemi advanced POWERTRENCH process that has been especially tailored to minimize the on *state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics ap.

FDN358P Datasheet (291.31 KB)

Preview of FDN358P PDF

Datasheet Details

Part number:

FDN358P

Manufacturer:

ON Semiconductor ↗

File Size:

291.31 KB

Description:

P-channel mosfet.
DATA SHEET www.onsemi.com MOSFET Single, P-Channel, POWERTRENCH), Logic Level VDSS 30 V RDS(ON) MAX 125 mW @ 10 V 200 m.

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FDN358P P-Channel MOSFET ON Semiconductor

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