FDN360P Datasheet, ON Semiconductor

* −2 A, −30 V
* RDS(ON) = 80 mW @ VGS = −10 V
* RDS(ON) = 125 mW @ VGS = −4.5 V
* Low Gate Charge (6.2 nC Typical)
* High Performance Trench Technolog.

where low in−line power loss and fast switching are required. Features
* −2 A, −30 V
* RDS(ON) = 80 mW @ VGS = −.

This P−Channel Logic Level MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain low gate charge for superior switching performance. These devices are wel.