FDN360P Datasheet - ON Semiconductor

P-Channel MOSFET

FDN360P Features

* 2 A,

* 30 V

* RDS(ON) = 80 mW @ VGS =

* 10 V

* RDS(ON) = 125 mW @ VGS =

* 4.5 V

* Low Gate Charge (6.2 nC Typical)

* High Performance Trench Technology for Extremely Low RDS(ON)

* High Power Version of Industry Standard

FDN360P General Description

This P *Channel Logic Level MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on *state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for low voltage and batte.

FDN360P Datasheet (281.29 KB)