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FDN360P Datasheet P-channel MOSFET

Manufacturer: onsemi

Overview: DATA SHEET www.onsemi.com MOSFET – Single, P-Channel, POWERTRENCH) FDN360P General.

General Description

This P−Channel Logic Level MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain low gate charge for superior switching performance.

These devices are well suited for low voltage and battery powered applications where low in−line power loss and fast switching are required.

Key Features

  • 2 A,.
  • 30 V.
  • RDS(ON) = 80 mW @ VGS =.
  • 10 V.
  • RDS(ON) = 125 mW @ VGS =.
  • 4.5 V.
  • Low Gate Charge (6.2 nC Typical).
  • High Performance Trench Technology for Extremely Low RDS(ON).
  • High Power Version of Industry Standard SOT.
  • 23 Package. Identical Pin.
  • Out to SOT.
  • 23 with 30% Higher Power Handling Capability.
  • These Devices are Pb.
  • Free and are RoHS Compliant SOT.
  • 23 CASE 52.

Similar Datasheet

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