| Part Number | FDN360P Datasheet |
|---|---|
| Manufacturer | onsemi |
| Overview |
This P−Channel Logic Level MOSFET is produced using onsemi’s
advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain low gate charge for sup.
* *2 A, *30 V * RDS(ON) = 80 mW @ VGS = *10 V * RDS(ON) = 125 mW @ VGS = *4.5 V * Low Gate Charge (6.2 nC Typical) * High Performance Trench Technology for Extremely Low RDS(ON) * High Power Version of Industry Standard SOT *23 Package. Identical Pin *Out to SOT *23 with 30% Higher Power Handling Capab. |