FDN360P Datasheet and Specifications PDF

The FDN360P is a P-Channel MOSFET.

Key Specifications

PackageSOT-23-3
Mount TypeSurface Mount
Pins3
Height1.12 mm
Length2.92 mm
Max Operating Temp150 °C
Min Operating Temp-55 °C
Datasheet4U Logo
Part NumberFDN360P Datasheet
Manufactureronsemi
Overview This P−Channel Logic Level MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain low gate charge for sup.
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*2 A,
*30 V
* RDS(ON) = 80 mW @ VGS =
*10 V
* RDS(ON) = 125 mW @ VGS =
*4.5 V
* Low Gate Charge (6.2 nC Typical)
* High Performance Trench Technology for Extremely Low RDS(ON)
* High Power Version of Industry Standard SOT
*23 Package. Identical Pin
*Out to SOT
*23 with 30% Higher Power Handling Capab.
Part NumberFDN360P Datasheet
DescriptionP-Channel MOSFET
ManufacturerKexin Semiconductor
Overview SMD Type P-Channel MOSFET FDN360P (KDN360P) TraMnOsiSsFtoErsT Ƶ Features ƽ VDS (V) = -30 V ƽ ID = -2 A ƽ RDS(ON) = 0.080 ȍ @ VGS = -10 V ƽ RDS(ON) = 0.125 ȍ @ VGS = -4.5 V D G S +0.1 2.4 -0.1 S. ƽ VDS (V) = -30 V ƽ ID = -2 A ƽ RDS(ON) = 0.080 ȍ @ VGS = -10 V ƽ RDS(ON) = 0.125 ȍ @ VGS = -4.5 V D G S +0.1 2.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.1 1.3 -0.1 +0.1 0.97 -0.1 0.55 0.4 Unit : mm 0.1 +0.05 -0.01 1. Gate 2. Source 3. Drain 0-0.1 +.
Part NumberFDN360P Datasheet
Descriptionsingle P-Channel MOSFET
ManufacturerFairchild Semiconductor
Overview This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior s.
* -2 A, -30 V. RDS(on) = 0.080 Ω @ VGS = -10 V RDS(on) = 0.125 Ω @ VGS = -4.5 V.
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* Low gate charge (5nC typical). Fast switching speed. High performance trench technology for extremely low RDS(ON). High power and current handling capability. Applications
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* DC/DC converter Load switch Mo.

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