FDN360P Overview
Description
This P-Channel Logic Level MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Key Features
- RDS(ON) = 80 mW @ VGS = -10 V
- RDS(ON) = 125 mW @ VGS = -4.5 V
- Low Gate Charge (6.2 nC Typical)
- High Performance Trench Technology for Extremely Low RDS(ON)
- High Power Version of Industry Standard SOT-23 Package. Identical Pin-Out to SOT-23 with 30% Higher Power Handling Capability
