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FDN360P - P-Channel MOSFET

Key Features

  • ƽ VDS (V) = -30 V ƽ ID = -2 A ƽ RDS(ON) = 0.080 ȍ @ VGS = -10 V ƽ RDS(ON) = 0.125 ȍ @ VGS = -4.5 V D G S +0.1 2.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.1 1.3 -0.1 +0.1 0.97 -0.1 0.55 0.4 Unit : mm 0.1 +0.05 -0.01 1. Gate 2. Source 3. Drain 0-0.1 +0.1 0.38 -0.1 Ƶ Absolute Maximum Ratings TA = 25ć unless otherwise noted Parameter Symbol Rating Unit Drain-Source Voltage Gate-Source Voltage VDS -30 V VGS ±20 Continuous Drain Current Pu.

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SMD Type P-Channel MOSFET FDN360P (KDN360P) TraMnOsiSsFtoErsT Ƶ Features ƽ VDS (V) = -30 V ƽ ID = -2 A ƽ RDS(ON) = 0.080 ȍ @ VGS = -10 V ƽ RDS(ON) = 0.125 ȍ @ VGS = -4.5 V D G S +0.1 2.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.1 1.3 -0.1 +0.1 0.97 -0.1 0.55 0.4 Unit : mm 0.1 +0.05 -0.01 1. Gate 2. Source 3. Drain 0-0.1 +0.1 0.38 -0.1 Ƶ Absolute Maximum Ratings TA = 25ć unless otherwise noted Parameter Symbol Rating Unit Drain-Source Voltage Gate-Source Voltage VDS -30 V VGS ±20 Continuous Drain Current Pulsed Drain Current ID -2 A IDM -20 Power Dissipation (Note 1a) PD (Note 1b) 0.5 W 0.46 Thermal Resistance.Junction- to-Ambient Thermal Resistance.