FDN360P
Key Features
- G S +0.1 2.4 -0.1 SOT-23
- 9 +0.1 -0.1
- 4 +0.1 -0.1 3 1 2
- 95 +0.1 -0.1 1.9 +0.1 -0.1 +0.1 1.3 -0.1 +0.1 0.97 -0.1
- 4 Unit : mm
- 1 +0.05 -0.01
- Source
- Drain 0-0.1 +0.1 0.38 -0.1 Ƶ Absolute Maximum Ratings TA = 25ć unless otherwise noted Parameter Symbol Rating Unit Drain-Source Voltage Gate-Source Voltage VDS -30 V VGS ±20 Continuous Drain Current Pulsed Drain Current ID -2 A IDM -20 Power Dissipation (Note 1a) PD (Note 1b)
- 46 Thermal - to-Ambient Thermal - to-Case (Note 1a) (Note 1) RthJA RthJC 250 ć/W 75 Junction Temperature Storage Temperature Range TJ 150 ć Tstg -55 to 150 Notes:
- RșJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RșJC is guaranteed by design while RșCA is determined by the user's board design. a. 250ć/W when mounted on a 0.02 in2 pad of 2oz Cu. c. 270ć/W when mounted on a 0.001in2 pad of 2oz Cu. 1 SMD Type TraMnOsiSstFoErsT P-Channel MOSFET FDN360P (KDN360P) Ƶ Electrical Characteristics TA = 25ć unless otherwise noted Parameter Symbol Test Conditions Drain-Source Breakdown Voltage VDSS ID= -250 ȝA, VGS=0V Zero Gate Voltage Drain Current IDSS VDS= -24V, VGS=0V Gate-Body Leakage Current IGSS VDS=0V, VGS= ±20V Gate Threshold Voltage VGS(th) VDS=VGS , ID= -250 ȝA VGS= -10V, ID= -2 A Static Drain-Source On-Resistance RDS(On) VGS= -10V, ID= -2 A , TJ=125ć VGS= -4.5V, ID= -1.5 A On State Drain Current
