FDP085N10A - N-Channel MOSFET

Product Overview

ON Semiconductor

Datasheet Details

Part number	FDP085N10A
Manufacturer	ON Semiconductor
File Size	3.93 MB
Description	N-Channel MOSFET
Datasheet	FDP085N10A Datasheet
Additional preview pages of the FDP085N10A datasheet.

Product details

Description

This N-Channel MOSFET is produced using ON Semiconductor's PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. Synchronous Rectification for ATX / Server / Telecom PSU Battery Protection Circuit Motor Drives and Uninterruptible Power Supplies D GDS TO-220 G S MOSFET Maximum Ratings TC = 25oC unless otherwise noted.Symbol VDSS VGSS ID IDM EAS dv/dt PD TJ, TSTG TL Param

Features

RDS(on) = 7.35 mΩ (Typ. ) @ VGS = 10 V, ID = 96 A.
Fast Switching Speed.
Low Gate Charge, QG = 31 nC (Typ. ).
High Performance Trench Technology for Extremely Low RDS(on).
High Power and Current Handling Capability.
RoHS Compliant.

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Published: Dec 25, 2023 |