FDP085N10A
FDP085N10A is N-Channel MOSFET manufactured by onsemi.
- N-Channel Power Trench® MOSFET
N-Channel Power Trench® MOSFET
100 V, 96 A, 8.5 mΩ
Features
- RDS(on) = 7.35 mΩ (Typ.) @ VGS = 10 V, ID = 96 A
- Fast Switching Speed
- Low Gate Charge, QG = 31 n C (Typ.)
- High Performance Trench Technology for Extremely Low
RDS(on)
- High Power and Current Handling Capability
- Ro HS pliant
Description
This N-Channel MOSFET is produced using ON Semiconductor's Power Trench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
Applications
- Synchronous Rectification for ATX / Server / Tele PSU
- Battery Protection Circuit
- Motor Drives and Uninterruptible Power Supplies
TO-220
MOSFET Maximum Ratings TC = 25o C unless otherwise noted.
Symbol VDSS VGSS
IDM EAS dv/dt
TJ, TSTG TL
Parameter
Drain to Source Voltage
Gate to Source Voltage Drain Current Drain Current
- Continuous (TC = 25o C)
- Continuous (TC = 100o C)
- Pulsed
(Note 1)
Single Pulsed Avalanche...
