FDP20N50
Key Features
- RDS(on) = 200 mW (Typ.) @ VGS = 10 V, ID = 10 A
- Low Gate Charge (Typ. 45.6 nC)
- Low Crss (Typ. 27 pF)
- 100% Avalanche Tested
Datasheets by Manufacturer
| Part Number | Manufacturer | Description |
|---|---|---|
| FDP20N50 | Inchange Semiconductor | N-Channel MOSFET |