n-channel mosfet.
* RDS(on) = 210 mW (Typ.) @ VGS = 10 V, ID = 10 A
* Low Gate Charge (Typ. 50 nC)
* Low Crss (Typ. 27 pF)
* 100% Avalanche Tested
* Improve dv/dt Capab.
in which the performance of MOSFET’s body diode is significant. This device family is suitable for switching power conve.
UniFET MOSFET is onsemi's high voltage MOSFET family based
on planar stripe and DMOS technology. This MOSFET is tailored to reduce on−state resistance, and to provide better switching performance and higher avalanche energy strength. The body diode’s.
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