Datasheet Summary
MOSFET
- N-Channel, POWERTRENCH)
250 V, 25 A, 42.5 mW
Description This N- Channel MOSFET is produced using onsemi’s advance
POWERTRENCH process that has been tailored to minimize the on- state resistance while maintaining superior switching performance.
Features
- RDS(on) = 36.3 mW (Typ.) @ VGS = 10 V, ID = 25 A
- Fast Switching Speed
- Low Gate Charge
- High Performance Trench Technology for Extremely Low RDS(on)
- High Power and Current Handling Capability
- This is a Pb- Free Device
Applications
- Consumer Appliances
- Synchronous Rectification
DATA SHEET .onsemi.
VDS 250 V
RDS(on) MAX 42.5 mW @ 10 V
ID MAX 25 A
TO- 220 Fullpack, 3- Lead / TO- 220F- 3SG CASE...
