FDS2672 Description
This single N−Channel MOSFET is produced using onsemi’s advanced UItraFET Trench process that has been especially tailored to minimize the on−state resistance and yet maintain superior switching performance.
FDS2672 Key Features
- Max rDS(on) = 70 mW at VGS = 10 V, ID = 3.9 A
- Max rDS(on) = 80 mW at VGS = 6 V, ID = 3.5 A
- Fast Switching Speed
- High Performance Trench Technology for Extremely Low RDS(on)
- These Device is Pb-Free, Halide Free and are RoHS pliant