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MOSFET – N-Channel, UltraFET Trench
200 V, 3.9 A, 70 mW
FDS2672
General Description This single N−Channel MOSFET is produced using onsemi’s
advanced UItraFET Trench process that has been especially tailored to minimize the on−state resistance and yet maintain superior switching performance.
Features
• Max rDS(on) = 70 mW at VGS = 10 V, ID = 3.9 A • Max rDS(on) = 80 mW at VGS = 6 V, ID = 3.5 A • Fast Switching Speed • High Performance Trench Technology for Extremely Low RDS(on) • These Device is Pb−Free, Halide Free and are RoHS Compliant
Applications
• DC−DC Conversion
ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Unit
VDS Drain to Source Voltage
VGS Gate to Source Voltage
ID
Drain Current
− Continuous (Note 1a)
− Pulsed
200
V
±20
V
3.
FDS2672 Datasheet
