FDS2672 Datasheet N-Channel MOSFET

Manufacturer: onsemi

FDS2672 n-channel mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	FDS2672
Manufacturer	onsemi
File Size	301.73 KB
Description	N-Channel MOSFET
Download	FDS2672 Download (PDF)

General Description

This single N−Channel MOSFET is produced using onsemi’s advanced UItraFET Trench process that has been especially tailored to minimize the on−state resistance and yet maintain superior switching performance.

Overview

MOSFET – N-Channel, UltraFET Trench 200 V, 3.9 A, 70 mW FDS2672.

Key Features

Max rDS(on) = 70 mW at VGS = 10 V, ID = 3.9 A.
Max rDS(on) = 80 mW at VGS = 6 V, ID = 3.5 A.
Fast Switching Speed.
High Performance Trench Technology for Extremely Low RDS(on).
These Device is Pb.
Free, Halide Free and are RoHS Compliant.

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