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FDS2672 - N-Channel UltraFET

General Description

This single N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced UItraFET Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

DC-DC conversion D SO-8 D D D 5 4 3 2 1 www.Da

Key Features

  • Max rDS(on) = 70mΩ at VGS = 10V, ID = 3.9A.
  • Max rDS(on) = 80mΩ at VGS = 6V, ID = 3.5A.
  • Fast switching speed.
  • High performance trench technology for extremely low rDS(on).
  • RoHS compliant tm General.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com FDS2672 N-Channel UltraFET Trench® MOSFET August 2006 FDS2672 N-Channel UltraFET Trench® MOSFET 200V, 3.9A, 70mΩ Features „ Max rDS(on) = 70mΩ at VGS = 10V, ID = 3.9A „ Max rDS(on) = 80mΩ at VGS = 6V, ID = 3.5A „ Fast switching speed „ High performance trench technology for extremely low rDS(on) „ RoHS compliant tm General Description This single N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced UItraFET Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Application „ DC-DC conversion D SO-8 D D D 5 4 3 2 1 www.DataSheet4U.