Datasheet Summary
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FDS2672 N-Channel UltraFET Trench® MOSFET
August 2006
FDS2672 N-Channel UltraFET Trench® MOSFET
200V, 3.9A, 70mΩ
Features
- Max rDS(on) = 70mΩ at VGS = 10V, ID = 3.9A
- Max rDS(on) = 80mΩ at VGS = 6V, ID = 3.5A
- Fast switching speed
- High performance trench technology for extremely low rDS(on)
- RoHS pliant tm
General Description
This single N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced UItraFET Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Application
- DC-DC conversion
D SO-8
5 4 3 2 1
..6
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