Kexin Electronics FDS2672
N-Channel MOSFET
FEATURES
● VDS (V) = 200V● ID = 3.9A (VGS = 10V)
● RDS(ON) < 70mΩ (VGS = 10V)
● RDS(ON) < 80mΩ (VGS = 6V) 5 6 7 8 SOP-8 4 3 2 1 +0.04 0.21 -0.02 1.50 0.15 1 Source 2 Source 3 Source 4 Gate 5 Drain 6 Drain 7 Drain 8 Drain
●
ABSOLUTE MAXIMUM RATINGS
Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current -Continuous Pulsed Drain Current Single Pulse Avalanche Energy (Note.1) Power Dissipation (Note.2) (Note.3) Thermal Resistance.Junction- to-Ambient (Note.2) (Note.3) Thermal Resistance.Junction- to-Case Junction Temperature Storage Temperature Range Symbol VDS VGS ID IDM EAS PD RthJA RthJC TJ Tstg Rating 200 ±20 3.9 50 37.5 2.5 1 50 125 25 150 -55 to 150 Note.1: Starting TJ = 25°C, L = 3mH, IAS = 5A, VDD = 100V, VGS = 10V Note.2: 50°C/W (10 sec) 62.5°C/W steady stat when mounted on a 1in 2 pad of 2 oz copper Note.3 :125°C/W when mounted on a minimum pad Unit V A mJ W ℃/W ℃ 1 SMD Type MOSFET N-Channel MOSFET FDS2672 (KDS2672)●
ELECTRICAL CHARACTERISTICS
Ta =...